PART |
Description |
Maker |
MC12022A MC12022B MC12022BP MC12022AD MC12022AP MC |
1.1GHz Dual Modulus Prescaler
|
MOTOROLA[Motorola, Inc]
|
HD155007T |
High Speed Prescaler Dual PLL Frequency Synthesizer IC
|
Hitachi
|
PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
Q67120-C850 Q67120-C934 SAB88C166W-5M SAB88C166-5M |
16-Bit CMOS Single-Chip Microcontrollers with/without oscillator prescaler with 32 KByte Flash EPROM High Speed CMOS Logic Quad 2-Input OR Gates 14-SOIC -55 to 125
|
SIEMENS AG
|
HMMC-3008 |
DC-16 GHz GaAs HBT MMIC Divide-by-8 Prescaler 3008 SERIES, PRESCALER, UUC14
|
Agilent(Hewlett-Packard) AGILENT TECHNOLOGIES INC
|
D2221UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB SEME-LAB[Seme LAB]
|
D2202UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB SEME-LAB[Seme LAB]
|
EZ55Z3L-ZADJTR EZ55Z3L-ZADJTA EZ55Z3L-Z3.3TA EZ55Z |
THS6032 High Speed Amplifier Evaluation Modules THS3001 High Speed Amplifier Evaluation Modules THS6012 High Speed Amplifier Evaluation Modules THS4042 High Speed Amplifier Evaluation Module THS6022 High Speed Amplifier Evaluation Modules 积极的固定电压稳压器 THS4061 High Speed Amplifier Evaluation Module 积极的固定电压稳压器 THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节 THS4012 High Speed Amplifier Evaluation Module 积极的固定电压稳压器 Positive Adjustable Voltage Regulator 积极可调电压稳压 THS4052 High Speed Amplifier Evaluation Module 积极的固定电压稳压器 ADS8383 Evaluation Module 积极可调电压稳压 THS4041 High Speed Amplifier Evaluation Module 积极的固定电压稳压器
|
Semtech, Corp. Everlight Electronics Co., Ltd. Taiwan Semiconductor Co., Ltd. Black Box, Corp.
|
TIM7179-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
G6K-2F-RF-TDC5 G6K-2F-RF-S |
Surface Mount, 1GHz / 3 GHz Miniature DPDT, High Frequency Relay
|
Omron Electronics LLC
|